DocumentCode
1673957
Title
25 GHz inductorless VCO in a 45 GHz SiGe technology
Author
Saniei, Namdar ; Djahanshahi, Hormoz ; Salama, C. Andre T
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fYear
2003
Firstpage
269
Lastpage
272
Abstract
This paper discusses the design and implementation of a 25 GHz VCO in a 45 GHz SiGe process. The VCO is based on a full-wave rectification frequency-doubling technique applied to a 13 GHz differential ring-type VCO. The VCO occupies an area of 150 μm × 150 μm, consumes a dc power of 240 mW, exhibits a phase noise better than -87 dBc/Hz at 1 MHz offset and features a remarkably high ratio (25/45) of the VCO frequency to the process ft.
Keywords
Ge-Si alloys; bipolar analogue integrated circuits; frequency multipliers; phase noise; rectification; semiconductor materials; voltage-controlled oscillators; 13 GHz; 240 mW; 25 GHz; 45 GHz; SiGe; SiGe HBT technology; differential ring-type oscillator; full-wave rectification frequency-doubling technique; inductorless VCO; phase noise; Clocks; Frequency; Germanium silicon alloys; Mirrors; Phase noise; Resistors; Ring oscillators; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1213941
Filename
1213941
Link To Document