Title :
Optimization of SiGe HBT VCOs for wireless applications
Author :
Johansen, Tom K. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
Abstract :
This paper describes the optimization of phase noise performance in fully integrated SiGe HBT differential LC-tuned voltage-controlled oscillators (VCOs) for wireless applications. An accurate expression for phase noise in SiGe HBT LC-tuned VCOs is presented which takes the nonlinear operation of the oscillator into account. Design methods are shown which minimize the different sources of phase noise toward the intrinsic limit set by the resonator quality factor. A set of 2 GHz SiGe HBT VCOs have been implemented in a 0.5 μm, 47 GHz SiGe BiCMOS process to provide experimental verification of the benefits of the design methods presented in this paper.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF oscillators; circuit optimisation; circuit tuning; heterojunction bipolar transistors; integrated circuit design; phase noise; semiconductor materials; voltage-controlled oscillators; 0.5 micron; 2 GHz; SiGe; SiGe BiCMOS process; SiGe HBT VCO; design optimization; differential LC-tuned voltage controlled oscillator; nonlinear operation; phase noise; resonator quality factor; wireless communication; Design methodology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; Noise level; Phase noise; Silicon germanium; Tail; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213942
