DocumentCode :
1673985
Title :
Nanopowders of the barium zirconium titanate for applications in electronic devices
Author :
Muensita, Supasarote ; Binhayeeniyi, Nawal
Author_Institution :
NANOTEC CENTER of Excellence, Prince of Songkla Univ., Songkla, Thailand
fYear :
2010
Firstpage :
877
Lastpage :
877
Abstract :
For decades that the piezoelectric materials play important roles in various applications. Nowadays, it is of importance that we should avoid the materials which are environmentally toxic. We propose the barium zirconium titanate (BaZrxTi1-xO3 or BZT) ceramics which are the solid solutions of barium titanate and barium zirconate. This material has a phase diagram containing compositions or the Zr:Ti ratios that can provoke the elecromechanical properties, including the piezoelectric response which is a key to miniature the devices at the nanoscale dimension. The most important factor is to have a homogeneous constituent with uniform distribution to facilitate the functions of the nano-and microelectronic devices. We choose the sol-gel method for producing the nanometer-size powders of the BZT. The crystalline structure of the BZT strongly depends on the Zr:Ti ratio, however, they are perovskite and molar for the zirconium content below 20 mol%. The best piezoelectric coefficient of 130 pC/N is found from the BZT ceramic with the Zr:Ti ratio of 5:95.
Keywords :
barium compounds; crystal structure; nanofabrication; nanoparticles; phase diagrams; piezoceramics; piezoelectricity; sol-gel processing; BaZrxTi1-xO3; ceramics; crystalline structure; elecromechanical properties; electronic devices; nanopowders; perovskite structure; phase diagram; piezoelectric coefficient; piezoelectric materials; piezoelectric response; sol-gel method; Barium; Ceramics; Composite materials; Nanoparticles; Nanoscale devices; Piezoelectric devices; Piezoelectric materials; Solids; Titanium compounds; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425158
Filename :
5425158
Link To Document :
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