Title :
Four-watt 20-GHz partial monolithic amplifier
Author :
Yarborough, R. ; Saunier, P. ; Tserng, Hua-Quen ; Salzman, K. ; Smith, B. ; Heston, D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A 4-W power amplifier with 28% power-added efficiency at 20 GHz has been demonstrated using 0.25- mu m heterostructure FET (HFET) device technology. This two-stage amplifier features a mostly monolithic approach with a portion of the input and output matching networks on alumina. The output matching network employs reactive matching elements on GaAs, followed by a Chebyshev coupled-line transformer/combiner on alumina to achieve a low-impedance match with minimal loss. Discrete 0.25- mu m HFET device results at 18 GHz and 20 GHz as well as amplifier design and performance over a >3 GHz band are presented.<>
Keywords :
MMIC; field effect integrated circuits; impedance matching; microwave amplifiers; power amplifiers; waveguide couplers; 0.25 micron; 20 GHz; 28 percent; 4 W; Chebyshev coupled-line transformer/combiner; HFET technology; amplifier design; low-impedance match; matching networks; partial monolithic amplifier; reactive matching elements; two-stage amplifier; Breakdown voltage; Circuits; FETs; Gallium arsenide; HEMTs; Impedance matching; MODFETs; Power amplifiers; Power transmission lines; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276740
