Title :
MOSFET drain engineering for low-power applications
Author :
Fujishiro, Felix ; Ding, Lily ; Nowak, Ed ; Loh, Ying Tsong
Author_Institution :
Compass Design Autom., San Jose, CA, USA
Abstract :
The lightly doped drain (LDD) transistor structure has been used for several sub-micron process generations to improve hot carrier immunity for 5-volt applications. The principal challenge for LDD design is to optimize current-drive capability, thus improving circuit performance, while maintaining acceptable hot-carrier lifetime. The challenge for deep sub-micron devices remains the same, but some of the design constraints have changed. Reduction of the supply voltage Vdd inherently improves the hot-carrier lifetime, thus potentially allowing greater latitude in MOS device design. In this paper, the current-drive capability of MOSFETs with various drain structures is studied for 3.3-volt applications
Keywords :
MOSFET; hot carriers; leakage currents; semiconductor device reliability; semiconductor doping; 3.3 V; MOS device design; MOSFET drain engineering; circuit performance; current-drive capability; design constraints; drain structures; hot carrier immunity; hot-carrier lifetime; lightly doped drain; low-power applications; Circuit optimization; Degradation; Design automation; Design optimization; Hot carriers; Implants; Logic circuits; MOS devices; MOSFET circuits; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500154
