Title :
A 21 to 26GHz SiGe bipolar PA MMIC
Author :
Cheung, Tak Shun Dickson ; John, R.L. ; Harame, David L.
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
A 3-stage 21 to 26GHz SiGe PA with 21dBm output power is presented. Small-signal gain is approximately 20dB and reverse isolation is <-30dB. PAE at 24GHz is >12.5%. On-chip transformers are extensively used to efficiently couple common-base stages and I/O to source and load, respectively. The 2.45×2.45mm2 chip is fabricated in a 0.18μm SiGe BiCMOS process (fT=100GHz) and draws 450mA from a 1.8V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; transformers; 0.18 micron; 1.8 V; 100 GHz; 21 to 26 GHz; 450 mA; BiCMOS process; Ge-Si; I/O circuit; PAE; SiGe; bipolar PA MMIC; common-base stages; on-chip transformers; Electric breakdown; Germanium silicon alloys; Impedance matching; Integrated circuit technology; MMICs; Power amplifiers; Power generation; Radio frequency; Silicon germanium; Transformers;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494103
