Title :
Direct-digital RF modulator IC in 0.13 μm CMOS for wide-band multi-radio applications
Author :
Eloranta, Petri ; Seppinen, Pauli
Author_Institution :
Nokia, Helsinki, Finland
Abstract :
An IQ-modulator constructed using direct digital-to-RF converters for wide-band multi-radio applications achieves better than -43dBc of LO-leakage and -47dBc of image rejection. The signal-level dependent maximum power consumption is 60.5mW with a -10dBm WCDMA signal. The modulator occupies 0.7mm2 of silicon area in a standard 1.2V 0.13 μm CMOS process.
Keywords :
3G mobile communication; CMOS integrated circuits; digital-analogue conversion; modulators; oscillators; radiofrequency integrated circuits; 0.13 mm; 1.2 V; 60.5 mW; CMOS process; IQ-modulator; LO-leakage; WCDMA signal; direct digital-to-RF converters; direct-digital RF modulator IC; image rejection; wide-band multi-radio applications; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Energy consumption; Image converters; Multiaccess communication; Radio frequency; Radiofrequency integrated circuits; Silicon; Wideband;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494104
