Title :
Miniaturized, X-band solid-state transmitter
Author :
Mizan, M. ; Sturzebecher, D. ; Higgins, T. ; Maluszczak, E.
Author_Institution :
Army Res. Lab., EPSD, Fort Monmouth, NJ, USA
Abstract :
A compact X-band solid-state transmitter capable of 26-W peak output power with state-of-the-art frequency stability is reported. A dielectric resonator oscillator (DRO), used as a frequency source, has a frequency stability of 80 parts per million over the temperature range of -50 degrees C to +50 degrees C. A six-stage GaAs MESFET RF amplifier, with an associated gain of 37 dB, also functions as a pulse modulator by changing the gate bias voltages. The last amplifier stage consists of four amplifiers operating in a power combining configuration. The transmitter, including the pulse modulator, is packaged into 7.6 cm*5.1 cm*2.5 cm and has a total weight of 0.22 kg. The transmitter operates from a +or-12-V battery and has an overall DC to RF conversion efficiency of 15%.<>
Keywords :
dielectric resonators; frequency stability; microwave links; radio transmitters; solid-state microwave circuits; -50 to 50 degC; 26 W; 37 dB; DC to RF conversion efficiency; GaAs MESFET RF amplifier; X-band solid-state transmitter; dielectric resonator oscillator; frequency source; frequency stability; peak output power; power combining configuration; pulse modulator; weight; Dielectrics; Frequency; Power amplifiers; Power generation; Pulse amplifiers; Pulse modulation; Radiofrequency amplifiers; Solid state circuits; Stability; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276750
