The influence of temperature on lifetime

Recombination by means of a deep center determines the lifetime of electrons and holes. Recombination process depends, mostly, on a recombination center; its density and capturing capability. In this work the influence of temperature on capture coefficients of gold (as deep recombination center in silicon) is considered. The lifetime of a hole in an n-type silicon is calculated. Only one energy level of gold is examined; Shockley-Read-Hall, as well as, Auger recombinations are taken into account. Calculated lifetimes are compared with experimentally obtained values. On the basis of this comparison it can be concluded that capture coefficients of a deep recombination center depend on temperature; temperature dependence on a capture cross section, σ ₁ can be described as ~T^-2