A 32 GHz quadrature LC-VCO in 0.25 μm SiGe BiCMOS technology

Author

Chan, W.L. ; Veenstra, H. ; Long, J.R.

Author_Institution

Delft Univ. of Technol., Netherlands

fYear

2005

Firstpage

538

Abstract

A 32 GHz quadrature VCO achieves over 45 dB of image rejection in a 70 GHz-f_T SiGe process. Each VCO stage uses a new negative resistance topology to realize >330 Ω of negative resistance with <4 fF parasitic capacitance. The coupled VCO has a measured tuning range of 30.6 to 32.6 GHz, phase noise of -97 dBc/Hz at 1 MHz offset and occupies 0.7×0.5 mm².

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; circuit tuning; integrated circuit design; millimetre wave integrated circuits; millimetre wave oscillators; negative resistance circuits; phase noise; voltage-controlled oscillators; 0.25 micron; 0.5 mm; 0.7 mm; 30.6 to 32.6 GHz; 70 GHz; SiGe; SiGe BiCMOS technology; image rejection; negative resistance topology; parasitic capacitance; phase noise; quadrature LC-VCO; quadrature VCO; silicon-germanium BiCMOS technology; tuning range; BiCMOS integrated circuits; Electrical resistance measurement; Germanium silicon alloys; Noise measurement; Parasitic capacitance; Phase measurement; Phase noise; Silicon germanium; Topology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1494107

Filename

1494107