A systematic study of ESD protection structures for RF ICs

Author

Chen, Guang ; Feng, Haigang ; Wang, Albert

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

fYear

2003

Firstpage

347

Lastpage

350

Abstract

We report the first systematic investigation of various ESD protection structures, e.g., diodes, ggNMOS, gcNMOS, ggPMOS, SCR and multi-mode SCR´s in a 0.35 μm production BiCMOS technology, for RF ICs up to 100 GHz by mixed-mode ESD simulation. Typical circuit parameters for RF ICs, e.g., parasitic resistances, capacitances, noise figures and S-parameters were studied. The comparison study suggests that compact SCR-type structures and diode strings may be solutions to RF ESD protection.

Keywords

BiCMOS integrated circuits; S-parameters; capacitance; electric resistance; electrostatic discharge; protection; radiofrequency integrated circuits; semiconductor diodes; thyristors; 0.35 micron; 100 GHz; BiCMOS technology; ESD protection structures; RF ESD protection; compact SCR-type structures; diode strings; gate-coupled NMOS; grounded-gate NMOSFET; grounded-gate PMOS; mixed-mode ESD simulation; multi-mode SCR; noise figures; parasitic capacitances; parasitic resistances; scattering parameters; BiCMOS integrated circuits; Circuit simulation; Diodes; Electrostatic discharge; Noise figure; Parasitic capacitance; Production systems; Protection; Radio frequency; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213959

Filename

1213959