A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGe HBTs

A new 4-port S-parameter de-embedding methodology is presented. This de-embedding technique considers distributed on-wafer parasitics in the millimeter wave band (f > 30 GHz). The procedure is based on simple analytical calculations and requires no equivalent circuit modeling or electromagnetic simulations. Using both EM theory and HP-ADS simulations, we show that this technique can be used to accurately extract the S-parameters to frequencies higher than 100 GHz for state-of-the-art SiGe HBTs with a maximum cutoff frequency of 180 GHz. This method is also valid for use in decoupling package parasitic.