A high gain low noise 110 GHz monolithic two-stage amplifier

Author

Wang, H. ; Tan, K.L. ; Ton, T.N. ; Dow, G.S. ; Liu, P.H. ; Streit, D.C. ; Berenz, J. ; Pospieszalski, M.W. ; Pan, S.K.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1993

Firstpage

783

Abstract

A high-gain low-noise 110-GHz monolithic two-stage amplifier using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT (high electron mobility transistor) technology is presented. This amplifier demonstrates a small signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6 dB associated gain was obtained at 113 GHz. The superior results of this monolithic low-noise amplifier allow system applications at 110 GHz, such as radiometers and low-noise receivers.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 110 GHz; 113 GHz; 15.6 dB; 19.6 dB; 3.4 dB; 3.9 dB; AlGaAs-InGaAs-GaAs; low-noise HEMT; low-noise receivers; monolithic two-stage amplifier; radiometers; small signal gain; Frequency; Gain; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276757

Filename

276757