• DocumentCode
    1674441
  • Title

    Improved independent failure unit model for electromigration

  • Author

    Zhihong, Li ; Ye, Gu ; Wu Guoying ; Yangyuan, Wu Guoying Wang

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • fYear
    1995
  • Firstpage
    367
  • Lastpage
    369
  • Abstract
    Considering physical mechanism and some necessary assumptions we have improved Independent Failure Unit (IFU) Model which is currently used to predict lifetime for EM. Our simulation results are more consistent with experiments than conventional IFU model
  • Keywords
    electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; IC metal interconnects; IC reliability; electromigration; independent failure unit model; lifetime prediction; physical mechanism; Current density; Electromigration; Geometry; Grain size; Predictive models; Probability; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.500168
  • Filename
    500168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1674441