Title :
Improved independent failure unit model for electromigration
Author :
Zhihong, Li ; Ye, Gu ; Wu Guoying ; Yangyuan, Wu Guoying Wang
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
Considering physical mechanism and some necessary assumptions we have improved Independent Failure Unit (IFU) Model which is currently used to predict lifetime for EM. Our simulation results are more consistent with experiments than conventional IFU model
Keywords :
electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; IC metal interconnects; IC reliability; electromigration; independent failure unit model; lifetime prediction; physical mechanism; Current density; Electromigration; Geometry; Grain size; Predictive models; Probability; Solid modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500168
