Title :
A 94 GHz-band low noise downconverter
Author :
Yoshinaga, Hiroyuki ; Masuda, Kohji ; Takagi, S. ; Abe, B. ; Shibata, K. ; Kawasaki, H. ; Tokuda, H. ; Tokaji, I.
Author_Institution :
Toshiba Corp., Tokyo, Japan
Abstract :
A 94-GHz-band low-noise downconverter has been developed by combining an InP-HEMT (high-electron-mobility transistor) low-noise amplifier, a pseudomorphic HEMT mixer, and a dielectric resonator oscillator, each fabricated using the planar circuit technology. The downconverter shows a noise figure of less than 4.9 dB and a conversion gain of greater than 11 dB.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; indium compounds; 94 GHz; InP; conversion gain; dielectric resonator oscillator; low noise downconverter; low-noise amplifier; noise figure; planar circuit technology; pseudomorphic HEMT mixer; Circuit noise; Dielectrics; Gain; HEMTs; Indium gallium arsenide; Low-noise amplifiers; Noise figure; Oscillators; PHEMTs; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276758
