Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz

A broadband small-signal model suitable for deep sub-micron MOSFET high frequency applications and its parameter extraction have been proposed and demonstrated. Using a 110 GHz millimeter wave S-Parameter measurement, we directly extracted the parameters and fitted very well within a broad range from 45 MHz up to 110 GHz. This is a state-of-the-art technique that demonstrates the model up to 110 GHz and can be considered as an initial method for an optimization procedure to be used for more complete models.