Title :
Introducing the space growth of GaAs single crystals
Author :
Lin, L.Y. ; Zhong, X.R.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained
Keywords :
III-V semiconductors; crystal growth from melt; deep level transient spectroscopy; field effect transistors; gallium arsenide; segregation; semiconductor growth; zero gravity experiments; zone melting; GaAs; electrical properties; low noise FET devices; optical properties; opto-electrical properties; recoverable satellites; semi-insulating crystals; semiconductor growth; structural characteristics; Crystals; Gallium arsenide; Gravity; Impurities; Optical noise; Satellites; Semiconductor materials; Space exploration; Space technology; Working environment noise;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500169
