DocumentCode
1674471
Title
Introducing the space growth of GaAs single crystals
Author
Lin, L.Y. ; Zhong, X.R.
Author_Institution
Inst. of Semicond., Acad. Sinica, Beijing, China
fYear
1995
Firstpage
370
Lastpage
373
Abstract
Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained
Keywords
III-V semiconductors; crystal growth from melt; deep level transient spectroscopy; field effect transistors; gallium arsenide; segregation; semiconductor growth; zero gravity experiments; zone melting; GaAs; electrical properties; low noise FET devices; optical properties; opto-electrical properties; recoverable satellites; semi-insulating crystals; semiconductor growth; structural characteristics; Crystals; Gallium arsenide; Gravity; Impurities; Optical noise; Satellites; Semiconductor materials; Space exploration; Space technology; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500169
Filename
500169
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