The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μm technology nodes

As scaling down the RF MOSFET from 0.18 to 0.13 μm technology nodes, the f_T increases but the NF_min becomes worse by increasing ∼0.2 dB. A small NF_min of 0.93 dB is measured at 5.8 GHz in 0.18 μm MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 μm is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.