Title :
Carbon-doped HBTs for OEICs
Author :
Stillman, G.E. ; Feng, M. ; Fresina, M.A. ; Hartmann, Q.J. ; Ahmari, D.A. ; Mares, P.J. ; Thomas, S. ; Stockman, S.A. ; Jackson, S.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Carbon base doping for high performance HBTs promises higher reliability, but the growth techniques must be optimized so that the hydrogen passivation of C acceptors inherent in suitable epitaxial growth techniques does not degrade device performance. Recent results are discussed in this paper
Keywords :
bipolar integrated circuits; carbon; heterojunction bipolar transistors; integrated optoelectronics; passivation; semiconductor doping; vapour phase epitaxial growth; HBT; OEIC; acceptors; carbon base doping; epitaxial growth; hydrogen passivation; reliability; Degradation; Doping; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MOCVD; Molecular beam epitaxial growth; Optoelectronic devices; Passivation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500171
