Title :
A numerical study of the effect of base and collector structures on the performance of AlGaAs/GaAs multi-finger HBTs
Author :
Kager, A. ; Liou, I.J. ; Huang, C.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
A numerical analysis is presented to investigate different base and collector structures on the dc and ac performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AC performance; AlGaAs-GaAs; AlGaAs/GaAs multi-finger HBT; DC performance; MEDICI; base structure; collector structure; heterojunction bipolar transistor; numerical analysis; two-dimensional device simulation; Analytical models; Charge carrier processes; Current distribution; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Medical simulation; Poisson equations; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500172
