• DocumentCode
    167455
  • Title

    Study on physical adsorption performance of methane molecule on the circular pore surface of Si (110)

  • Author

    Zhengxin Yan ; An Gong ; Yuxian Tian ; Dongzhi Yan ; Qian Chen ; Qian Liao

  • Author_Institution
    Coll. of Sci., Xi´an Univ. of Sci. & Technol., Xi´an, China
  • fYear
    2014
  • fDate
    8-9 May 2014
  • Firstpage
    240
  • Lastpage
    243
  • Abstract
    The physical adsorption performance of methane molecule on the circular pore surface of Si (110) is investigated using the density functional theory based on first principle calculation. The adsorption energy and density of states of system is calculated during methane absorbing on three different adsorption positions. By analyzing the change of the model band structure and density of states before and after adsorption, the adsorption characteristics corresponding to three adsorption positions are achieved. The results show that methane is located on the top position of circular pore surface of Si (110) is the most stable adsorption position. When CH4 adsorbed on this site, the electron peak shift of the absorbing system which moves to the direction of lower energy and adsorption energy is -17.5eV. The obtained data and conclusion in this paper will be applied in the fields of the sensitive to methane of silicon surface and gas sensor technology.
  • Keywords
    ab initio calculations; adsorption; band structure; density functional theory; electronic density of states; elemental semiconductors; organic compounds; silicon; surface chemistry; CH4; Si; Si (110) surface; adsorption energy; band structure; circular pore surface; density functional theory; density-of-states; electron peak shift; first principle calculation; methane molecule; physical adsorption; Adsorption; Nonhomogeneous media; Silicon; DFT; Methane molecule; Physical adsorption; circular pore surface of Si (110);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Computer and Applications, 2014 IEEE Workshop on
  • Conference_Location
    Ottawa, ON
  • Type

    conf

  • DOI
    10.1109/IWECA.2014.6845601
  • Filename
    6845601