Title :
Ultra-broadband quantum-dot semiconductor optical amplifier and its applications
Author :
Lu, Z.G. ; Liu, J.R. ; Raymond, S. ; Poole, P.J. ; Barrios, P.J. ; Pakulski, G. ; Poitras, D. ; Sun, F.G. ; Taebi, S. ; Hall, T.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res Council Canada, Ottawa, ON
Abstract :
We have developed an ultra-broadband InAs/InGaAsP quantum-dot semiconductor optical amplifier around 1520 nm with the 3-dB bandwidth of 150 nm. The four-wave mixing process and multi-wavelength lasers have been demonstrated by using our QD-SOAs.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; quantum dot lasers; semiconductor optical amplifiers; wideband amplifiers; InAs-InGaAsP; QD-SOA; four-wave mixing; multi-wavelength lasers; quantum-dot semiconductor optical amplifier; ultra-broadband amplifier; wavelength 1520 nm; Bandwidth; Fiber nonlinear optics; Nonlinear optics; Optical mixing; Optical pumping; Optical saturation; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
DOI :
10.1109/OFC.2007.4348325
