Title :
Current handling and thermal considerations in a high current semiconductor switch package
Author :
Dugdale, Pamela ; Woodworth, Arthur
Author_Institution :
Int. Rectifier GB, Oxted, UK
fDate :
6/22/1905 12:00:00 AM
Abstract :
In response to the need for a high current, low inductance, low resistance package, International Rectifier have designed the Supertab MOSFET. This new device is capable of carrying currents in excess of 200 A. The Supertab package is different from existing power MOSFET packages in that the source connection is made through a tab rather than a lead. This paper presents a discussion of the way in which a combination of experimental work and computer modelling has been used to develop this high current discrete semiconductor switch package
Keywords :
field effect transistor switches; inductance; power MOSFET; semiconductor device packaging; International Rectifier; Supertab MOSFET; current handling; high current; high current semiconductor switch package; low inductance; low resistance package; power MOSFET packages; source connection; tab; thermal considerations; Contact resistance; Inductance; MOSFET circuits; Plastic packaging; Rectifiers; Semiconductor device packaging; Silicon; Switches; Temperature; Thermal resistance;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-5864-3
DOI :
10.1109/APEC.2000.826117
