Title :
A low noise vector modulator with integrated basebandfilter in 120 nm CMOS technology
Author :
Simon, Martin ; Weigel, Robert
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A low noise vector modulator for cellular systems with integrated baseband filter has been developed in 120 nm CMOS technology. The baseband filter is an anti-aliasing filter for the digital to analogue converter of the baseband that has been build around a differential amplifier with 3rd order butterworth low pass characteristic. High linearity and low output noise can be achieved for the modulator due to the current interface between the baseband filter and the mixer cells. The GSM specification for emitted noise into the receive band can be fulfilled without using a duplex filter behind the power amplifier output.
Keywords :
Butterworth filters; CMOS integrated circuits; active filters; cellular radio; differential amplifiers; digital-analogue conversion; integrated circuit noise; low-pass filters; modulators; power amplifiers; 120 nm; Butterworth low-pass characteristic; CMOS technology; GSM power amplifier; anti-aliasing filter; cellular system; current interface; differential amplifier; digital-to-analogue converter; duplex filter; integrated baseband filter; linearity; mixer cell; output noise; vector modulator; Analog-digital conversion; Band pass filters; Baseband; CMOS technology; Differential amplifiers; Digital filters; GSM; Linearity; Power amplifiers; Power filters;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213973
