• DocumentCode
    1674738
  • Title

    1550nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90nm CMOS

  • Author

    Roth, Jonathan E. ; Palermo, Samuel ; Helman, Noah C. ; Bour, David P. ; Miller, David A B ; Horowitz, Mark

  • Author_Institution
    Ginzton Lab., Stanford
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A low-voltage 90 nm CMOS optical interconnect transceiver operating at 1550 nm is presented. This is the first system demonstrated using the recent quasi-waveguide angled facet electroabsorption modulator (QWAFEM), featuring simple electronic and optical packaging.
  • Keywords
    CMOS integrated circuits; electro-optical modulation; electroabsorption; flip-chip devices; integrated optoelectronics; optical communication equipment; optical interconnections; transceivers; CMOS; electronic packaging; flip-chip bonded device; low voltage electroabsorption modulators; optical interconnect transceiver; optical packaging; quasi-waveguide angled facet electroabsorption modulator; size 90 nm; wavelength 1550 nm; Bonding; CMOS process; Clocks; Low voltage; Optical coupling; Optical interconnections; Optical modulation; Optical surface waves; Optical waveguides; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    1-55752-831-4
  • Type

    conf

  • DOI
    10.1109/OFC.2007.4348330
  • Filename
    4348330