Title :
1550nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90nm CMOS
Author :
Roth, Jonathan E. ; Palermo, Samuel ; Helman, Noah C. ; Bour, David P. ; Miller, David A B ; Horowitz, Mark
Author_Institution :
Ginzton Lab., Stanford
Abstract :
A low-voltage 90 nm CMOS optical interconnect transceiver operating at 1550 nm is presented. This is the first system demonstrated using the recent quasi-waveguide angled facet electroabsorption modulator (QWAFEM), featuring simple electronic and optical packaging.
Keywords :
CMOS integrated circuits; electro-optical modulation; electroabsorption; flip-chip devices; integrated optoelectronics; optical communication equipment; optical interconnections; transceivers; CMOS; electronic packaging; flip-chip bonded device; low voltage electroabsorption modulators; optical interconnect transceiver; optical packaging; quasi-waveguide angled facet electroabsorption modulator; size 90 nm; wavelength 1550 nm; Bonding; CMOS process; Clocks; Low voltage; Optical coupling; Optical interconnections; Optical modulation; Optical surface waves; Optical waveguides; Transceivers;
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
DOI :
10.1109/OFC.2007.4348330
