Title :
Study of the relationship between the epitaxial layer quality and the characteristic of the current regulator devices
Author :
Zheyuan Zhang ; Hong, Yunxiang
Author_Institution :
Huayue Microelectron. Co. Ltd., Zhejiang, China
Abstract :
An analysis of the relationship between epitaxial layer quality and the characteristics of current regulator devices (CRDs), and several methods for improving the epitaxial layer quality are reported. By improving the crystal structure integrity and the thickness and electrical resistivity uniformities of the epitaxial layer, the current value (IH) of the CRD is exactly controlled and the maximum breakdown voltage (VB) reaches 130 volts
Keywords :
electric current control; electrical resistivity; junction gate field effect transistors; power field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; 130 V; crystal structure integrity; current regulator devices; current value control; electrical resistivity uniformity; epitaxial layer quality; long channel JFET; maximum breakdown voltage; planar semiconductor process; thickness uniformity; Breakdown voltage; Doping; Electric resistance; Epitaxial growth; Epitaxial layers; Inductors; Microelectronics; Regulators; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500183
