Title :
Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
Author :
Pospieszalski, M.W. ; Lakatosh, W.J. ; Lai, R. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Dia, R.M. ; Velebir, J.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device noise; solid-state microwave circuits; 0.1 micron; 0.2 dB; 18 K; 3 mm; 33 dB; 40 to 45 GHz; 70 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP HEMTs; E-band; Q-band; ambient temperature; atmospheric window; collapse-free DC operation; cryogenically-coolable amplifiers; mm-wave amplifiers; noise model; power consumption per stage; Cryogenics; HEMTs; Indium phosphide; Low-noise amplifiers; MODFETs; Millimeter wave transistors; Noise figure; Operational amplifiers; Superconducting device noise; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276769
