DocumentCode
1674912
Title
A study on the estimation of γ total-dose radiation hardness of operational amplifiers
Author
Lin, Wuyuan ; Su, Wanshi ; You, Zhipu
Author_Institution
Sichuan Inst. of Solid-State Circuits, China
fYear
1995
Firstpage
422
Lastpage
424
Abstract
Based on the results from transistor irradiation experiments, a method is presented in the paper to estimate the radiation hardness level of a particular operational amplifier using computer simulation
Keywords
analogue integrated circuits; digital simulation; gamma-ray effects; integrated circuit modelling; operational amplifiers; radiation hardening (electronics); computer simulation; gamma radiation effects; operational amplifiers; radiation hardness level; total-dose radiation hardness; transistor irradiation experiments; Bipolar transistor circuits; Circuit analysis; Circuit simulation; Condition monitoring; Degradation; Dielectrics; Feedback; Operational amplifiers; Power transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500184
Filename
500184
Link To Document