• DocumentCode
    1674921
  • Title

    Ion beam nanobiology

  • Author

    Yu, L.D. ; Nimmanpipug, P. ; Lee, V.S. ; Anuntalabhochai, S.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
  • fYear
    2010
  • Firstpage
    815
  • Lastpage
    816
  • Abstract
    In ion implantation in materials, when the ion energy is sufficiently low, the ion interaction with materials is in the nanoscale. When low-energy ion beam irradiates biological living materials such as cells and DNA, the nanoscaled ion interaction with the biological objects is a novelty. Theoretical calculation demonstrates the low-energy ion range in DNA being in the order of nanometer. In experiments, keV ions were applied to irradiate naked DNA to investigate primary effects of the low-energy ion interaction with DNA, which would be served as a basis for further investigations on mechanisms involved in ion beam induced mutation of biological species. Preliminary results showed that the nanoscale low-energy ion interaction with DNA could indeed induce changes in the DNA forms. DNA transfer in bacteria demonstrated mutation occurred after low-energy ion irradiation of the DNA. In computer molecular dynamics simulation, 1-100-eV ions bombarded A-DNA and revealed DNA changes occurring in nanoscale with preferential consequence.
  • Keywords
    DNA; ion beam effects; ion implantation; nanobiotechnology; DNA; biological living materials; biological objects; biological species; cells; ion beam nanobiology; ion energy; ion implantation; low-energy ion beam; low-energy ion irradiation; molecular dynamics simulation; mutation; nanoscale low-energy ion interaction; nanoscaled ion interaction; Biological materials; Biological system modeling; Biology computing; Cells (biology); DNA computing; Genetic mutations; Ion beams; Ion implantation; Microorganisms; Nanobioscience;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425192
  • Filename
    5425192