Title :
Study of NMOSFET substrate current mechanisms in the temperature range of 77-295 K
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Substrate-current mechanisms in NMOSFET´s in the range of 77-295 K are investigated. It is found that electron mean-free path is temperature independent with a value of about 7.6 nm. Although the maximum channel electron energy at low temperatures is a little larger than at 295 K the reduced impact ionization results in an increase of the substrate current less than one order of magnitude. With these mechanisms, simulation and experiment are in a fairly good agreement
Keywords :
MOSFET; cryogenic electronics; electron mean free path; hot carriers; impact ionisation; semiconductor device models; semiconductor device reliability; 77 to 295 K; NMOSFET substrate current mechanisms; channel electron energy; electron mean-free path; hot carriers; impact ionization; semiconductor device models; temperature independent path; Electrons; Heating; Impact ionization; Intrusion detection; MOSFET circuits; Microelectronics; Photonic band gap; Scattering; Temperature dependence; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500185
