Title :
Reliability evaluation for integrated operational amplifiers by means of 1/f noise measurement
Author :
Yiqi, Zhuang ; Qing, Sun
Author_Institution :
Inst. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
It is shown from the accelerated life test and noise measurement that the failure of integrated operational amplifiers due to the drift of IIB or IOS is strongly correlated with 1/f noise in the devices, and the drift is approximately proportional to the initial 1/f noise current. 1/f noise measurement may therefore be applied as a fast and nondestructive tool to predict the long-term instability of operational amplifiers
Keywords :
1/f noise; circuit stability; electric noise measurement; integrated circuit measurement; integrated circuit noise; integrated circuit testing; life testing; operational amplifiers; 1/f noise measurement; accelerated life test; current drift; integrated operational amplifiers; long-term instability; noise current; noise measurement; reliability evaluation; Electron devices; Life estimation; Life testing; Low-frequency noise; Noise level; Noise measurement; Nondestructive testing; Operational amplifiers; Performance evaluation; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500186
