DocumentCode
1674950
Title
Reliability evaluation for integrated operational amplifiers by means of 1/f noise measurement
Author
Yiqi, Zhuang ; Qing, Sun
Author_Institution
Inst. of Microelectron., Xidian Univ., Xi´´an, China
fYear
1995
Firstpage
428
Lastpage
430
Abstract
It is shown from the accelerated life test and noise measurement that the failure of integrated operational amplifiers due to the drift of IIB or IOS is strongly correlated with 1/f noise in the devices, and the drift is approximately proportional to the initial 1/f noise current. 1/f noise measurement may therefore be applied as a fast and nondestructive tool to predict the long-term instability of operational amplifiers
Keywords
1/f noise; circuit stability; electric noise measurement; integrated circuit measurement; integrated circuit noise; integrated circuit testing; life testing; operational amplifiers; 1/f noise measurement; accelerated life test; current drift; integrated operational amplifiers; long-term instability; noise current; noise measurement; reliability evaluation; Electron devices; Life estimation; Life testing; Low-frequency noise; Noise level; Noise measurement; Nondestructive testing; Operational amplifiers; Performance evaluation; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500186
Filename
500186
Link To Document