Title :
Trade-offs between SiGe and GaAs bipolar ICs
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The intrinsic physical properties and electrical parameters of SiGe and GaAs heterojunction bipolar transistors (HBTs) are compared and discussed. The reported performance of the two devices are comparable. At the same but relatively low current densities, GaAs HBTs are faster than SiGe HBTs. However, SiGe HBTs not using SOI can be designed to operate at much higher current densities by using smaller emitters, resulting in much lower power dissipation and potentially higher performance, but larger substrate-coupling noise, than GaAs HBTs
Keywords :
Ge-Si alloys; III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; integrated circuit noise; semiconductor materials; GaAs; SiGe; bipolar ICs; current densities; electrical parameters; heterojunction bipolar transistors; intrinsic physical properties; power dissipation; substrate-coupling noise; Capacitance; Current density; Dielectric constant; Electron mobility; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Silicon on insulator technology; Thermal conductivity;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500188
