Title :
Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy
Author :
Deng, C. ; Wu, J.C. ; Rack, J. ; Sigmon, T.W. ; Wybourne, M.N.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Oregon Graduate Inst., Portland, OR, USA
Abstract :
Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGe x bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip
Keywords :
Auger effect; Ge-Si alloys; atomic force microscopy; diffusion; photolithography; pulsed laser deposition; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor quantum wires; solid phase epitaxial growth; transmission electron microscopy; Auger electron spectroscopy; SiGe-Si; atomic force microscopy; cross-sectional transmission electron microscopy; direct writing; fabrication; lateral bipolar transistor; photolithographic lift-off technique; pulsed laser induced epitaxy; quantum wire; secondary electron microscopy; side diffusion; silicon chip; sub-micron wire; ultra-small Si1-xGex wire; Atomic beams; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Optical device fabrication; Optical pulses; Scanning electron microscopy; Transmission electron microscopy; Wire; Writing;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500190
