Title :
High-quality a-SiGe:H produced by nanometer deposition and hydrogen plasma annealing
Author :
Xu, Jun ; Miyazaki, Seiichi ; Hirose, Masataka ; Chen, Kunji ; Feng, Duan
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
High-quality narrow bandgap (<1.5 eV) a-SiGe:H films have been fabricated by alternately repeating the deposition of a few nanometer thick a-SiGe:H layer and hydrogen plasma annealing. With increasing hydrogen plasma annealing time, both the hydrogen content and optical bandgap are decreased and photosensitivity has been improved to >10 -5 S/cm and >104, respectively. It is shown that the metastable states are also reduced by hydrogen plasma annealing
Keywords :
Ge-Si alloys; amorphous semiconductors; annealing; dark conductivity; energy gap; hydrogen; narrow band gap semiconductors; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; solar cells; SiGe:H; glow discharge deposition; nanometer deposition; narrow bandgap films; optical bandgap; photosensitivity; plasma annealing; semiconductor thin films; solar cell materials; Annealing; Bonding; Conductivity; Hydrogen; Optical films; Photoconductivity; Photonic band gap; Plasma density; Plasma materials processing; Plasma measurements;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500191
