Title :
Standby leakage current estimation model for multi threshold CMOS inverter circuit in deep submicron technology
Author :
Sarkar, Hari ; Kundu, Sudakshina
Author_Institution :
Dept. of Comput. Sci. & Eng., West Bengal Univ. of Technol., Kolkata, India
Abstract :
Multi Threshold CMOS (MTCMOS) circuit can be used to overcome the trade-off between speed and standby leakage current inherent in single threshold CMOS circuit. The simplest form is the dual threshold CMOS (DTCMOS), in which two threshold voltages are used in the same logic circuit. As a result, the standby power can be greatly reduced by this approach which is a key factor for battery operated devices. This paper proposed a model for analytical calculation of standby leakage current for MTCMOS Inverter circuit in 90nm technology. We have used BSIM device model which is a widely used industrial model for standby leakage current modelling of MTCMOS Inverter circuit.
Keywords :
CMOS logic circuits; integrated circuit modelling; leakage currents; logic gates; low-power electronics; BSIM device model; DTCMOS; MTCMOS inverter circuit; deep submicron technology; dual threshold CMOS; industrial model; logic circuit; multithreshold CMOS inverter circuit; single threshold CMOS circuit; standby leakage current estimation model; standby power; threshold voltages; CMOS integrated circuits; Integrated circuit modeling; Inverters; Leakage currents; MOSFET; Threshold voltage; 90nm technology; CMOS inverter circuit; MTCMOS; low and high Vth; subthreshold leakage current;
Conference_Titel :
VLSI Design and Test (VDAT), 2015 19th International Symposium on
Conference_Location :
Ahmedabad
Print_ISBN :
978-1-4799-1742-6
DOI :
10.1109/ISVDAT.2015.7208141
