DocumentCode :
1675352
Title :
Design and analysis of on-chip symmetric parallel-plate coupled-line balun for silicon RF integrated circuits
Author :
Yang, H.Y.D. ; Castaneda, J.A.
Author_Institution :
Broadcom Corp., El Segundo, CA, USA
fYear :
2003
Firstpage :
527
Lastpage :
530
Abstract :
In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFICs. High-performance on-chip transformer baluns for low-noise amplifiers and power amplifiers on multi-layer radio-frequency integrated circuits are constructed. Single-end primary and differential secondary are constructed on different dielectric surface planes. The metal windings of the primary and secondary are in parallel to form coupled lines. Both the primary and the secondary are designed symmetrically for differential operation. Additional layer interfaces and vias are used to provide bridges to assure the geometric symmetry. Examples of designs with test results are discussed.
Keywords :
UHF amplifiers; UHF power amplifiers; baluns; elemental semiconductors; impedance matching; integrated circuit design; integrated circuit noise; radiofrequency integrated circuits; silicon; 2.43 GHz; LNA; Si; Si RF integrated circuits; Si RFICs; differential operation; differential secondary; layer interfaces; low-noise amplifiers; metal windings; multilayer RFICs; onchip coupled-line balun; onchip symmetric parallel-plate balun; power amplifiers; single-end primary; transformer balun; vias; Bridge circuits; Coupling circuits; Dielectrics; High power amplifiers; Impedance matching; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-7694-3
Type :
conf
DOI :
10.1109/RFIC.2003.1214000
Filename :
1214000
Link To Document :
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