Title :
Modelling of hole confinement gate voltage range for SiGe-channel P-MOSFETs
Author :
Niu, Guo-fu ; Gang Ruan
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
An analytical model of hole confinement gate voltage range is derived for SiGe-channel p-MOSFETs and verified by SEDAN-3. The dependencies of hole confinement on threshold voltage, gate oxide and Si cap thicknesses, gate material, and Ge mole fraction are discussed. Various bulk and SOI SiGe p-MOSEETs are clarified to have the same hole confinement with threshold voltage adjustment
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor device models; semiconductor materials; silicon-on-insulator; P-MOSFETs; SEDAN-3; SOI; SiGe; analytical model; cap thicknesses; gate material; gate oxide; hole confinement gate voltage; mole fraction; threshold voltage; Analytical models; Boron; Capacitance; Doping; Epitaxial layers; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Solids; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500240
