Title :
Theoretical analysis of static induction thyristor
Author :
Li, S.Y. ; Liu, R.X. ; Yang, J.H.
Author_Institution :
Dept. of Phys., Lanzhou Univ., China
Abstract :
The potential distributions in the whole structure of an SITH are obtained by employing numerical simulation. A barrier to electrons is observed in the channel. The manner in which the barrier varies with the gate bias is studied. The crucial roles of the barrier in controlling the operating states are discussed
Keywords :
semiconductor device models; thyristors; voltage distribution; electron barrier; gate bias; numerical simulation; operating states control; potential distributions; static induction thyristor; Anodes; Cathodes; Doping; Electrons; Energy barrier; P-i-n diodes; Physics; Surface treatment; Thyristors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500243
