DocumentCode
1675788
Title
Control on the characteristics of the static induction transistor (SIT)
Author
Li, S.Y. ; Liu, R.X. ; Liu, S.
Author_Institution
Dept. of Phys., Lanzhou Univ., China
fYear
1995
Firstpage
473
Lastpage
475
Abstract
The SIT´s characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length lc, the channel thickness dc, the ratio of lc/dc and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics
Keywords
doping profiles; static induction transistors; SIT characteristics; channel doping concentration; channel factor; channel length; channel thickness; static induction transistor; Boron; Circuits; Doping; Neodymium; Thickness control; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500244
Filename
500244
Link To Document