DocumentCode :
1675788
Title :
Control on the characteristics of the static induction transistor (SIT)
Author :
Li, S.Y. ; Liu, R.X. ; Liu, S.
Author_Institution :
Dept. of Phys., Lanzhou Univ., China
fYear :
1995
Firstpage :
473
Lastpage :
475
Abstract :
The SIT´s characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length lc, the channel thickness dc, the ratio of lc/dc and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics
Keywords :
doping profiles; static induction transistors; SIT characteristics; channel doping concentration; channel factor; channel length; channel thickness; static induction transistor; Boron; Circuits; Doping; Neodymium; Thickness control; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.500244
Filename :
500244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1675788
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