• DocumentCode
    1675788
  • Title

    Control on the characteristics of the static induction transistor (SIT)

  • Author

    Li, S.Y. ; Liu, R.X. ; Liu, S.

  • Author_Institution
    Dept. of Phys., Lanzhou Univ., China
  • fYear
    1995
  • Firstpage
    473
  • Lastpage
    475
  • Abstract
    The SIT´s characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length lc, the channel thickness dc, the ratio of lc/dc and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics
  • Keywords
    doping profiles; static induction transistors; SIT characteristics; channel doping concentration; channel factor; channel length; channel thickness; static induction transistor; Boron; Circuits; Doping; Neodymium; Thickness control; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.500244
  • Filename
    500244