Title :
The performance comparison of CMOS vs biploar VCO in SiGe BiCMOS technology
Author :
Wang, Xudong ; Xudong Wang
Author_Institution :
Boston Design Center, TriQuint Semicond., Lowell, MA, USA
Abstract :
Two 2.3 GHz VCO monolithic ICs using CMOS and bipolar topology respectively for WCDMA transmitter application are designed and fabricated in IBM 0.25 μm SiGe BiCMOS technology. The design trade-offs of each design topology are discussed. The results indicated that the CMOS version has better phase noise, more power efficient, but more sensitive to temperature and process than that of the bipolar counter partner.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; Q-factor; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; integrated circuit design; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 0.25 micron; 2.3 GHz; CMOS topology; IBM technology; SiGe; SiGe BiCMOS technology; VCO monolithic ICs; WCDMA transmitter application; bipolar topology; performance comparison; phase noise; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Multiaccess communication; Phase noise; Silicon germanium; Topology; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1214022
