Low-noise, low DC power linear amplifiers

Author

Ikalainen, P.K. ; Witkowski, L.C. ; Varian, K.R.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

Firstpage

357

Abstract

Single- and dual-gate distributed amplifiers designed for standard ion-implanted GaAs FETs and a Ku-band amplifier were processed using a high-dynamic-range FET process. State-of-the-art results were achieved in terms of simultaneous linearity, DC power, noise figure, and gain-bandwidth OIP3/P/sub dc/ (third-order intercept point/DC power) ratios of the amplifiers were in the range 1 to 13.7 with noise figures as low as 3 dB. Improvement of 8 to 20 dB in second-order linearity has also been demonstrated. The results show that future receiver systems can be designed with a savings in DC power for a given dynamic range requirement, or more dynamic range can be had for a given amount of DC power.<>

Keywords

field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 3 dB; DC power; Ku-band amplifier; distributed amplifiers; dynamic range requirement; gain-bandwidth; high-dynamic-range FET process; ion-implanted GaAs FETs; noise figure; power linear amplifiers; receiver systems; second-order linearity; simultaneous linearity; Broadband amplifiers; Distributed amplifiers; Dynamic range; FETs; Gallium arsenide; Linearity; Low-noise amplifiers; Noise figure; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276804

Filename

276804