Title :
Passive FET MMIC linearizers for C, X, and Ku-band satellite applications
Author :
Katz, A. ; Moochalla, S. ; Klatskin, J.
Author_Institution :
Trenton State Coll., NJ, USA
Abstract :
The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. More than 2.5 GHz of bandwidth is obtained at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and a phase change of less than 5 degrees . Linearizer insertion loss was reduced to below 8 dB at C-band and 10 dB at Ku-band. The MMICs also verified the soundness of the CAD (computer-aided design) modeling techniques used to develop the chips, and the value of the unique MMIC air bridge over metal tuning technique incorporated into the designs.<>
Keywords :
III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; gallium arsenide; microwave amplifiers; satellite relay systems; travelling-wave-tubes; C-band; CAD; FET MMIC linearizers; GaAs; Ku-band; MESFET varactors; X-band; air bridge; carrier-to-intermodulation ratio; control elements; insertion loss; phase change; satellite applications; spaceborne traveling wave tube amplifiers; voltage variable resistors; Design automation; Field effect MMICs; Gallium arsenide; Integrated circuit measurements; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Microwave measurements; Monolithic integrated circuits; Satellites;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276805
