DocumentCode
1675923
Title
Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs
Author
Nguyen, L. ; Le, M. ; Delaney, M. ; Lui, M. ; Liu, T. ; Brown, J. ; Rhodes, R. ; Thompson, M. ; Hooper, C.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
fYear
1993
Firstpage
345
Abstract
Reports on the manufacturability of state-of-the-art passivated 0.1- mu m low-noise InP HEMTs (high electron mobility transistors). These HEMTs offer an attractive, cost-effective solution to millimeter-wave satellite communications. The authors discuss their yield and reproducibility, as well as typical performance at V- and W-bands.<>
Keywords
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device manufacture; solid-state microwave devices; 0.1 micron; HEMTs; InP; V-band; W-bands; manufacturability; millimeter-wave satellite communications; reproducibility; yield; Fixtures; HEMTs; Indium phosphide; Lithography; MODFETs; Manufacturing; Noise figure; Radiofrequency amplifiers; Reproducibility of results; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276807
Filename
276807
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