Title :
Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs
Author :
Nguyen, L. ; Le, M. ; Delaney, M. ; Lui, M. ; Liu, T. ; Brown, J. ; Rhodes, R. ; Thompson, M. ; Hooper, C.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
Reports on the manufacturability of state-of-the-art passivated 0.1- mu m low-noise InP HEMTs (high electron mobility transistors). These HEMTs offer an attractive, cost-effective solution to millimeter-wave satellite communications. The authors discuss their yield and reproducibility, as well as typical performance at V- and W-bands.<>
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device manufacture; solid-state microwave devices; 0.1 micron; HEMTs; InP; V-band; W-bands; manufacturability; millimeter-wave satellite communications; reproducibility; yield; Fixtures; HEMTs; Indium phosphide; Lithography; MODFETs; Manufacturing; Noise figure; Radiofrequency amplifiers; Reproducibility of results; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276807
