DocumentCode
1675972
Title
A 60 GHz-band ultra low noise planar-doped HEMT
Author
Katoh, T. ; Yoshida, N. ; Minami, H. ; Kashiwa, T. ; Orisaka, S.
Author_Institution
Mitsubishi Electric Corp., Hyogo, Japan
fYear
1993
Firstpage
337
Abstract
An ultra-low-noise AlGaAs/InGaAs HEMT (high electron mobility transistor) with a 0.15- mu m T-shaped gate and an Si planar-doped layer has been developed for millimeter-wave systems. The HEMT showed an extremely reduced minimum noise figure of 1.6 dB and a high associated gain of 6.5 dB at 60 GHz. The noise figure is the lowest value ever reported for the AlGaAs/InGaAs pseudomorphic HEMT.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; 0.15 micron; 1.6 dB; 6.5 dB; 60 GHz; AlGaAs-InGaAs; Si; T-shaped gate; millimeter-wave systems; minimum noise figure; planar-doped HEMT; pseudomorphic HEMT; Gallium arsenide; HEMTs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs; Scattering parameters; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276809
Filename
276809
Link To Document