Title :
A 60 GHz-band ultra low noise planar-doped HEMT
Author :
Katoh, T. ; Yoshida, N. ; Minami, H. ; Kashiwa, T. ; Orisaka, S.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
An ultra-low-noise AlGaAs/InGaAs HEMT (high electron mobility transistor) with a 0.15- mu m T-shaped gate and an Si planar-doped layer has been developed for millimeter-wave systems. The HEMT showed an extremely reduced minimum noise figure of 1.6 dB and a high associated gain of 6.5 dB at 60 GHz. The noise figure is the lowest value ever reported for the AlGaAs/InGaAs pseudomorphic HEMT.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; 0.15 micron; 1.6 dB; 6.5 dB; 60 GHz; AlGaAs-InGaAs; Si; T-shaped gate; millimeter-wave systems; minimum noise figure; planar-doped HEMT; pseudomorphic HEMT; Gallium arsenide; HEMTs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs; Scattering parameters; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276809
