Title :
Millimeter-wave simulation of a series-integrated resonant tunneling diode including transit time effect
Author :
Yang, C.C. ; Pan, D.-S.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
An oscillator scheme that substantially increases the millimeter-wave power generation capabilities of the quantum-well resonant tunneling diode (RTD) by device-level series integration is analyzed. A series-integrated RTD including the transit time effect has been simulated in great detail at millimeter-wave frequencies. Using the available experimental characteristics of a GaAs/AlAs quantum-well RTD, the simulation shows that 120-mW output power with 10% DC-to-RF conversion efficiency at a 5- Omega load can be obtained at 100 GHz when ten such RTDs are integrated in series.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling devices; solid-state microwave devices; transit time devices; tunnel diodes; 100 GHz; 120 MW; DC-to-RF conversion efficiency; GaAs-AlAs; device-level series integration; millimeter-wave power generation; oscillator scheme; series-integrated resonant tunneling diode; transit time effect; Diodes; Frequency; Gallium arsenide; Oscillators; Power generation; Quantum well devices; Resonant tunneling devices; Shock waves; Time series analysis; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276811
