A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications

Author

Rippke, Ian ; Duster, Jon ; Kornegay, K.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2003

Firstpage

667

Lastpage

670

Abstract

A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM´s 47 GHz f_T SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die area of 1.8 mm × 1.25 mm, offering at least 10× improvement in chip/board area over current designs, allowing for increased levels of transmitter integration.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; code division multiple access; mobile handsets; power amplifiers; semiconductor materials; 3.3 V; 30 percent; 42 mA; SiGe; SiGe BiCMOS technology; W-CDMA mobile handset; fully integrated single-chip power amplifier; BiCMOS integrated circuits; Germanium silicon alloys; Linearity; Mobile handsets; Multiaccess communication; Power amplifiers; Power generation; Silicon germanium; Telephone sets; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1214035

Filename

1214035