DocumentCode
1676128
Title
Ku-band low noise amplifier with using short-stub ESD protection
Author
Park, Chang-Kun ; Kim, Min-Gun ; Kim, Chung-Han ; Hong, Songcheol
Author_Institution
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2003
Firstpage
671
Lastpage
674
Abstract
A Ku-band ESD-protected low noise amplifier is designed using 0.15um pHEMT process. The input ESD protection is implemented with short-circuited stub. Since a short-circuited stub is used as an ESD protection as well as a matching element, there are no additional components and parasitic components associated with ESD protection. This endures 4400V (ESD tester limit) HBM test signal. The LNA has the noise figure of 1.24 dB and 24.5 dB gain at the frequency of 11.7-12.75 GHz.
Keywords
HEMT integrated circuits; MMIC amplifiers; electrostatic discharge; field effect MMIC; protection; 0.15 micron; 1.24 dB; 11.7 to 12.75 GHz; 24.5 dB; 4400 V; ESD protection; Ku-band low noise amplifier; pHEMT MMIC; short-circuited stub; Biological system modeling; Circuit testing; Electrostatic discharge; Low-noise amplifiers; Protection; Radio frequency; Radiofrequency integrated circuits; Semiconductor device noise; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1214036
Filename
1214036
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