A pseudo-concurrent 0.18 μm multi-band CMOS LNA

Author

Lavasani, Seyed Hossein Miri ; Chaudhuri, Bikram ; Kiaei, Sayfe

Author_Institution

Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA

fYear

2003

Firstpage

695

Lastpage

698

Abstract

A novel multi-band LNA, which can switch between standards GSM800 MHz/GSM1.8 GHz or GSM800 MHz/WCDMA2.1 GHz, is presented. The LNA provides 22.4 dB gain at 800 MHz and 14.1 dB at 1.8 GHz. The device selects between GSM1.8 GHz/WCDMA2.1 GHz by means of a simple PMOS switch. The LNA is fabricated in 0.18 μm technology using only CMOS transistors. Post-layout simulation results indicate a noise figure below 1.6 dB in all bands while drawing 8.5 mA from a 1.8 V power supply. To save die area, the input matching circuit is partially off-chip.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF integrated circuits; cellular radio; circuit simulation; code division multiple access; impedance matching; integrated circuit noise; 0.18 micron; 1.8 V; 14.1 dB; 2.1 GHz; 22.4 dB; 8.5 mA; 800 MHz; GSM1.8 GHz; GSM800 MHz; PMOS switch; WCDMA2.1 GHz; die area; input matching circuit; multi-band CMOS LNA; noise figure; post-layout simulation results; standards; Filtering theory; Filters; Frequency; Impedance matching; Inductors; Multiaccess communication; Noise measurement; Poles and zeros; Switches; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1214042

Filename

1214042