Title :
Modeling a new generation of RF devices: MOSFETs for L-band applications
Author :
Costa, J.C. ; Lovelace, D. ; Ngo, D. ; Camilleri, N.
Author_Institution :
Motorola, Tempe, AZ, USA
Abstract :
Results on large-signal modeling efforts for a novel MOSFET technology for L-band RF applications are presented. A parameter extraction procedure which yields accurate RF MOS large-signal models using DC and S-parameter data is presented along with a comparison of measured and modeled class-B amplifier, mixer, and S-parameter data.<>
Keywords :
S-parameters; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; DC parameter data; L-band applications; MOSFETs; RF devices; S-parameter data; parameter extraction; CMOS technology; Capacitance; L-band; MOSFETs; RF signals; Radio frequency; Resistors; SPICE; Scattering parameters; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276820
