Advanced design of broadband distributed amplifier using a SiGe BiCMOS technology

Author

Lee, Gye-An ; Ko, Hyunseok ; De Flaviis, Franco

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

fYear

2003

Firstpage

703

Lastpage

706

Abstract

In this paper, we present the design of an integrated distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some of the passive devices of the circuit has been achieved from full-wave electromagnetic simulation and novel equivalent circuit. We considered discontinuity effects to reduce parasitics at high frequency. The designed SiGe BiCMOS exhibit an available power gain of 7 dB from 0.5 GHz to 22 GHz. The accurate electromagnetic consideration can be applied to System-On-Chip application in order to reduce parasitics.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; distributed amplifiers; equivalent circuits; semiconductor materials; system-on-chip; wideband amplifiers; 0.5 to 22 GHz; 7 dB; BiCMOS technology; SiGe; broadband distributed amplifier; equivalent circuit; full-wave electromagnetic simulation; optical communication applications; parasitics; system-on-chip application; BiCMOS integrated circuits; Circuit simulation; Distributed amplifiers; Electromagnetic devices; Equivalent circuits; Germanium silicon alloys; Integrated circuit technology; Optical design; Optical fiber communication; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1214044

Filename

1214044